features low cost diffused junction low leakage low forward voltage drop high current capability and similar solvents mechanical data case:jedec do-15,molded plastic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.014 ounces,0.39 grams mounting pos ition: any maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. s i ng l e p h a s e , h a l f w a v e , 60 h z , r e s i s t i v e or i n du c t i v e lo a d. f or c a p a c i t i v e l oa d , d e r a t e by 2 0%. s fr 203 s fr 204 s fr 205 s fr 206 s fr 207 units maximum recurrent peak reverse voltage v rrm 200 400 600 800 1000 v max imum rms v oltage v rms 140 280 420 560 700 v maximum dc blocking voltage v dc 200 400 600 800 1000 v maximum average forw ard rectified current 9.5mm lead length, @t a = 5 5 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 2 . 0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr 2 00 ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja <d operating junction temperature range t j storage temperature range t stg note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. s f r 201 - - - s f r 2 0 7 d o - 1 5 50 35 50 s fr 201 easily cleaned with freon,alcohol,isopropanol 100 70 3. thermal resistance f rom junction to ambient. a 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. - 55---- +150 - 55---- + 150 45 120 40 the plastic material carries u/l recognition 94v-0 i r 60 5.0 100.0 1 . 2 i fsm 350 voltage range: 50 --- 1000 v current: 2.0 a 100 s fr 202 2.0 a f a s t r e c o v e r y r e c t i f i e r s i f(av) a dimensions in millimeters www.diode.kr diode semiconductor korea
.2 10 .1 .4 1.0 2 100 200 4 10 20 40 100 f=1mhz t j =25 t rr -1.0 a -0.25a 0 +0.5a 1cm pulse generator (note2) d.u.t. 1 n.1. 50 n.1. oscilloscope (note 1) (+) 50vdc (approx) (-) 10 n.1. (-) (+) 0.5 0 . 6 t j =25 pulse width=300 s fr201--- s fr207 junction capacitance,pf 40 www.diode.kr diode semiconductor korea
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